Poster programme


P:01 Using vacancy transport to unify memristor models
Isaac Abraham, University of Washington, USA


P:02 Position dependent performance in 5 nm vertically stacked lateral Si nanowires transistors
Talib Al-Ameri, University of Glasgow, UK


P:03 The impact of interface traps and self-heating in the degradation of the 4H-SiC VDMOSFET performance
Brendan Ubochi, Swansea University, UK


P:04 TCAD analysis of discrete dopant effect on variability of tunnel field effect transistor
Hidehiro Asai, National Institute of Advanced Industrial Science and Technology, Japan


P:05 Characterization of topological phase transitions in silicene and other 2D gapped Dirac materials
Juan Carlos, Bolívar Fernández, Instituto Carlos I de Física Teórica y Computacional, Spain


P:06 Study of ballistic transport in phosphorene-nanoribbon- FETs using empirical pseudopotentials
William Vandenberghe, The University of Texas at Dallas, USA


P:07 Power dissipation and noise in spin-wave-based computing systems
Wolfgang Porod, Pazmany Peter Catholic University, Hungary


P:08 Quantization and analysis of acoustic modes in a rectangular microsound nanowaveguide fixed on a rigid substrate
Michael Stroscio, University of Illinois at Chicago, USA


P:09 Effect of quantum confinement on lifetime of anharmonic decay of optical phonon in a confined GaAs structure
Michael Stroscio, University of Illinois at Chicago, USA


P:10 Quantized acoustic-phonon modes in a non-piezoelectric nanowaveguide
Michael Stroscio, University of Illinois at Chicago, USA


P:11 Quantized acoustic-phonon shear horizontal modes in a piezoelectric nanoresonator
Michael Stroscio, University of Illinois at Chicago, USA


P:12 Exchange-coupled majority logic gate
Wolfgang Porod, University of Notre Dame, USA


P:13 Multi-subband ensemble monte carlo simulator for 3D electron devices
Luca Donetti, Universidad de Granada, Spain


P:14 Charge corrections from exact electrostatics for metal-oxide interfaces
Thomas Durrant, University College London, UK


P:15 Monte Carlo simulations of electron transport in bulk GaN
Simon Forster, Swansea University, UK


P:16 Scaling of Tunnel FETs
Koichi Fukuda, AIST, Japan


P:17 Monte Carlo analysis of impact ionization processes and band-to-band tunneling in InxGa1-xAs PIN ungated devices
Beatriz García Vasallo, University of Salamanca, Spain


P:18 Multi-scale nonequilibrium green’s function method for LEDs: Balance of thermalization and tunneling
Gerhard Klimeck, Purdue University, USA


P:19 Electron and hole mobility calculation in GeSn alloys
Zoran Ikonic, University of Leeds, UK


P:20 Transport modelling and design of GaN/AlN based unipolar (opto-)electronic devices, and interface quality effects
Zoran Ikonic, University of Leeds, UK


P:21 Investigation of hot-carrier effects using a backward Monte Carlo method and full bands
Markus Kampl, TU Wien, Austria


P:22 Lindblad-based Markov approach to spatiotemporal quantum dynamics of wave packets in nanostructures
Frank Lengers, Universität Münster, Germany


P:23 Impact of the gate and external insulator thickness on the static characteristics of ultra-scaled silicon nanowire FETs
Demetrio Logoteta, Aix Marseille Université, France


P:24 Towards a full self - consistently coupled drift diffusion and Monte Carlo simulator to model silicon heterojunction solar cells
Dragica Vasileska, Arizona State University, USA


P:25 Characterisation of a tunnel field-effect transistor using 2D TCAD simulations
Daniel Nagy, University of Santiago de Compostela, Spain


P:26 Impact of layer rotational misalignment on the transport properties of van der Waals tunnel field effect transistors
Marco Pala, Center for Nanoscience et Nanotechnology, France


P:27 Do we really need the collapse law when modelling quantum transport in electron devices?
Zhen Zhan, Universitat Autònoma de Barcelona, Spain


P:28 Electric field modulation of phosphorene nanoribbons’ electronic properties
Irena Knezevic, University of Wisconsin-Madison, USA


P:29 Hole Trapping in Amorphous HfO2 and Al2O3 as a source of positive charging
Jack Strand, University College London, UK


P:30 Electron transport in defective metallic and semiconducting carbon nanotubes: An improved RGF-based O(N) approach
Fabian Teichert, TU Dresden, Germany


P:31 A mobility model for TCAD simulation of current variation by random discrete dopant
Ho In Yu, Seoul National University, South Korea


P:32 Spin recovery in the 25 nm gate length InGaAs field effect transistor
Ben Thorpe, Swansea University, UK 


P:33 Computing interfacial properties of polypyrrole on diamond nanoparticles for photovoltaic applications
Petra Matunová, Institute of Physics of the Czech Academy of Sciences, Czech Republic


P:34 Wigner modelling of surface roughness in quantum wires
Mihail Nedjalkov, TU Wien, Austria


P:35 NEGF through finite-volume discretization
Hans Kosina, TU Wien, Austria

Key dates

  • Abstract submission deadline (extended):
    24 January 2017
  • Early registration deadline:
    31 March 2017
  • Registration deadline:
    26 May 2017

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